2023
• 'STEM analysis of deformation and B distribution in nanosecond laser doped Si1-x Bx layer' - G. Hallais, G. Patriarche, L. Desvignes, D. Débarre, and F. Chiodi – Semicond. Sci. Technol. 38, 034003 (arXiv:2208.05053)
• 'Strain Measurement in Single Crystals by 4D-ED' - J. L. Lábár, B. Pécz, A. van Waveren, G. Hallais, L. Desvignes, and F. Chiodi – Nanomaterials, 13 (6), 1007
• 'Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field' - K. Hoummada, F. Dahlem, F. Panciera, E. Bustarret, C. Marcenat, D. Débarre, Y. El Amraoui, D. Mangelinck – European Physics Journal: Applied Physics 98, 40 (2023)
2022
• 'Strongly non-linear superconducting silicon resonators' - P. Bonnet, F. Chiodi, D. Flanigan, R. Delagrange, N. Brochu, D. Débarre, and H. le Sueur, Phys. Rev. Applied 17, 034057 (arXiv:2101.11125)
2021
• 'Laser annealing processes in semiconductor technology - chapter 9: Laser ultra-doped silicon: superconductivity and applications' - F. Chiodi, R. Daubriac, S. Kerdilès, Woodhead Publishing, Elsevier
2018
• 'Room temperature magneto-optic effect in silicon light-emitting diodes' - Chiodi, F. , Bayliss, S.L., Barast, L., Débarre, D., Bouchiat, H., Friend, R.H., Chepelianskii, A.D., Nature Communications 9, 1 (2018)
2017
• 'Proximity induced superconductivity in all-silicon superconductor-normal metal junctions' – F. Chiodi et al., Phys. Rev. B 96, 024503
2015
• 'French Team Considers Superconducting Si:B Applications' - ‘Superconductor Week’ décembre
• 'Silicon superconducting quantum interference device' - J. E. Duvauchelle et al., Appl. Phys. Lett. 107, 072601
2014
• 'Laser doping for ohmic contacts in n-type Ge' – F. Chiodi et al., Appl. Phys. Lett. 105, 242101
• 'Gas Immersion Laser Doping for superconducting nanodevices' – F. Chiodi et al., Appl. Surf. Sci. 302, 209
2013
• 'Thickness dependence of the superconducting critical temperature in heavily doped SiB epilayers' – A. Grockowiak et al., Phys. Rev. B 88, 064508
• 'Superconducting properties of laser annealed implanted Si:B epilayers' – A. Grockowiak et al., Phys. Rev. B 88, 064508
Before 2013
Optical and electrical properties of laser doped Si:B in the alloy range, A Bhaduri, T Kociniewski, F Fossard, J Boulmer, D Débarre, APPLIED SURFACE SCIENCE 258: 23, 9228-9232 (2012)
Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography , K Hoummada, F Dahlem, T Kociniewski, J Boulmer, C Dubois, G Prudon, E Bustarret, H Courtois, D Débarre, D Mangelinck, APPLIED PHYSICS LETTERS 101 182602-182606 (2012)
Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers, C Marcenat, J Kacmarcik, R Piquerel, P Achatz, G Prudon, C Dubois, B Gautier, J C Dupuy, E Bustarret, L Ortega, T Klein, J Boulmer, T Kociniewski, D Débarre, PHYSICAL REVIEW B 81: 020501-020504(R) (2010)
Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers, F Dahlem, T Kociniewski, C Marcenat, A Grockowiak, L M A Pascal, P Achatz, J Boulmer, D Débarre, T Klein, E Bustarret, H Courtois, PHYSICAL REVIEW B 82: 14. 140505-140508(R) (2010)
Enhanced photoluminescence of heavily n-doped germanium, M El Kurdi, T Kociniewski, T P Ngo, J Boulmer, D Débarre, P Boucaud, J F Damlencourt, O Kermarrec, D Bensahel, APPLIED PHYSICS LETTERS 94: 191107-191109 (2009)
Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon, D Cammilleri, F Fossard, D Débarre, C T Manh, C Dubois, E Bustarret, C Marcenat, P Achatz, D Bouchier, J Boulmer, THIN SOLID FILMS 517: 1. 75-79 (2008)
Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror, D Cammilleri, F Fossard, M Halbwax, C T Manh, V Yam, D Débarre, J Boulmer, D Bouchier, THIN SOLID FILMS 517: 1. 327-330 (2008)
Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping, F Fossard, J Boulmer, D Débarre, J L Perrossier, C Bachelet, F Fortuna, V Mathet, D Bouchier, APPLIED PHYSICS LETTERS 93: 2. 021911-021913 (2008)
Superconductivity in doped cubic silicon, E Bustarret, C Marcenat, P Achatz, J Kacmarcik, F Levy, A Huxley, L Ortega, E Bourgeois, X Blase, D Débarre, J Boulmer, NATURE 444: 7118. 465-468 (2006)
