Superconducting silicon



•  'Strongly non-linear superconducting silicon resonators' - P. Bonnet, et al., arXiv:2101.11125

•  'Laser annealing processes in semiconductor technology - chapter 9: Laser ultra-doped silicon: superconductivity and applications' - F. Chiodi, et al., Elsevier


•  'Proximity induced superconductivity in all-silicon superconductor-normal metal junctions' – F. Chiodi et al., Phys. Rev. B 96, 024503 


'French Team Considers Superconducting Si:B Applications' - ‘Superconductor Week’ décembre

'Silicon superconducting quantum interference device' - J. E. Duvauchelle et al., Appl. Phys. Lett. 107, 072601


   • 'Gas Immersion Laser Doping for superconducting nanodevices' – F. Chiodi et al., Appl. Surf. Sci. 302, 209


'Thickness dependence of the superconducting critical temperature in heavily doped SiB epilayers' – A. Grockowiak et al., Phys. Rev. B 88, 064508

'Superconducting properties of laser annealed implanted Si:B epilayers' – A. Grockowiak et al., Phys. Rev. B 88, 064508

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers, F Dahlem, T Kociniewski, C Marcenat, A Grockowiak, L M A Pascal, P Achatz, J Boulmer, D Débarre, T Klein, E Bustarret, H Courtois, PHYSICAL REVIEW B 82: 14. 140505-140508(R) (2010)

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers, C Marcenat, J Kacmarcik, R Piquerel, P Achatz, G Prudon, C Dubois, B Gautier, J C Dupuy, E Bustarret, L Ortega, T Klein, J Boulmer, T Kociniewski, D Débarre, PHYSICAL REVIEW B 81: 020501-020504(R) (2010)  

Superconductivity in doped cubic silicon, E Bustarret, C Marcenat, P Achatz, J Kacmarcik, F Levy, A Huxley, L Ortega, E Bourgeois, X Blase, D Débarre, J Boulmer, NATURE 444: 7118. 465-468  (2006)


Ultra-doped Si and Ge - optical properties and devices



'Room temperature magneto-optic effect in silicon light-emitting diodes' - Chiodi, F. , Bayliss, S.L.,  Barast, L., Débarre, D.,  Bouchiat, H., Friend, R.H., Chepelianskii, A.D.Nature Communications 9, 1 (2018)


  •  'Laser doping for ohmic contacts in n-type Ge' – F. Chiodi et al., Appl. Phys. Lett. 105, 242101


Enhanced photoluminescence of heavily n-doped germanium, M El Kurdi, T Kociniewski, T P Ngo, J Boulmer, D Débarre, P Boucaud, J F Damlencourt, O Kermarrec, D Bensahel, APPLIED PHYSICS LETTERS 94: 191107-191109 (2009) 


Nanosecond laser doping and annealing


Optical and electrical properties of laser doped Si:B in the alloy range, A Bhaduri, T Kociniewski, F Fossard, J Boulmer, D Débarre, APPLIED SURFACE SCIENCE 258: 23, 9228-9232 (2012) 

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography , K Hoummada, F Dahlem, T Kociniewski, J Boulmer, C Dubois, G Prudon, E Bustarret, H Courtois, D Débarre, D Mangelinck, APPLIED PHYSICS LETTERS 101 182602-182606 (2012)

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon, D Cammilleri, F Fossard, D Débarre, C T Manh, C Dubois, E Bustarret, C Marcenat, P Achatz, D Bouchier, J Boulmer, THIN SOLID FILMS 517: 1. 75-79 (2008)

Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror, D Cammilleri, F Fossard, M Halbwax, C T Manh, V Yam, D Débarre, J Boulmer, D Bouchier, THIN SOLID FILMS 517: 1. 327-330 (2008) 

Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping, F Fossard, J Boulmer, D Débarre, J L Perrossier, C Bachelet, F Fortuna, V Mathet, D Bouchier, APPLIED PHYSICS LETTERS 93: 2. 021911-021913 (2008)